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Results 21 - 34 of about 34 publications for Author: V. L. Shaposhnikov
| N |
Title |
Journal or book |
Year |
| 21 |
V. E. Borisenko, A. B. Filonov, L. I. Ivanenko, V. L. Shaposhnikov, D. B. Migas, G. Behr, J. Schumann, H. Vinzelberg.
Transport properties of semiconducting rhenium silicide |
Microelectronic Engineering 64(1), 225-232 |
2002 |
| 22 |
V. E. Borisenko, V. L. Shaposhnikov, D. B. Migas, W. Henrion, M. Rebien, L. Miglio, F. Marabelli, B. A. Cook.
Electronic and optical properties of isostructural β FeSi2 and OsSi2 |
Phys. Rev. B 64(7), 075208-1(-7) |
2001 |
| 23 |
V. E. Borisenko, V. L. Shaposhnikov, D. B. Migas, W. Henrion, M. Rebien, L. Miglio.
Optical properties of isostructural β FeSi2, OsSi2, Fe0.5Os0.5Si2 and Os0.5Fe0.5Si2 |
Optical Material 17(1), 335-338 |
2001 |
| 24 |
V. E. Borisenko, L. I. Ivanenko, V. L. Shaposhnikov, D. B. Migas, D. Lenssen, R. Crius, S. Mantl.
Optical properties of semiconducting Ru2Si3 |
Optical Material 17(1), 339-341 |
2001 |
| 25 |
V. L. Shaposhnikov, A. E. Krivosheev, A. V. Krivosheeva.
Changes in band structure of chromium disilicide under influence of isotropic and uniaxial deformations of its lattice |
Proceedings of the Belorussian Engineering Academy ¹1(11)/3, pp.55-57 - in Russian |
2001 |
| 26 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, D. B. Migas, A. Heinrich.
Narrow-gap semiconducting silicides: the band structure |
Microelectronic Engineering 50(1-4), 249 – 255 |
2000 |
| 27 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, N. N. Dorozhkin, D. B. Migas, H. Lange, A. Heinrich.
Electronic properties of semiconducting rhenium silicide |
Europhys. Lett 46(3), 376 – 381 |
1999 |
| 28 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, N. N. Dorozhkin, D. B. Migas, H. Lange, A. Heinrich.
Electronic properties of isostructural ruthenium and osmium silicides and germanides |
Phys. Rev. B 60(24), 16494 – 16498 |
1999 |
| 29 |
L. I. Ivanenko, V. L. Shaposhnikov, A. Heinrich, G. Behr, H. Griessmann, J. Schumann, C. Kleint.
Thermoelectric properties of rhenium disilicide |
Proceedings of Eighteenth International Conference on Thermoelectrics 161-164 |
1999 |
| 30 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, D. B. Migas, W. Henrion, H. Lange, G. Behr, M. Rebien, P. Stauss.
Theoretical and experimental study of interband optical transitions in semiconducting iron disilicide |
J. Appl. Phys 83(8), 4410 – 4414 |
1998 |
| 31 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, I. E. Tralle, D. B. Migas.
Transport property simulation of p type FeSi2 |
Phys. Stat. Sol. (b) 203(1), 183 – 187 |
1998 |
| 32 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, N. N. Dorozhkin, D. B. Migas, H. Lange.
Electronic properties of osmium disilicide |
Appl. Phys. Lett 70(8), 976 – 977 |
1997 |
| 33 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, N. N. Dorozhkin, D. B. Migas, G. V. Petrov, W. Henrion, H. Lange.
Electronic and related properties of crystalline semiconducting iron disilicide |
J. Appl. Phys 79(10), 7708 – 7712 |
1996 |
| 34 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, I. E. Tralle, N. N. Dorozhkin, D. B. Migas, G. V. Petrov, A. M. Anishchik.
Semiconducting properties of hexagonal chromium, molybdenum, and tungsten disilicides |
Phys. Stat. Sol. (b) 186(1), 209 – 215 |
1994 |
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